The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q
VDSS = 1000 V
ID25
=
15 A
RDS(on) =
0.7 Ω
trr ≤ 250 ns
Preliminary data sheet
TO-247 AD (IXFH)
Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
T C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
15
A
60
A
15
A
45
mJ
1.5
J
5
V/ns
360
W
-55 ...
IXFH15N100Q Datasheet
