IXFH20N100P - Polar Power MOSFET HiPerFET

Product Overview

IXYS Corporation

Part number	IXFH20N100P
Manufacturer	IXYS Corporation
File Size	134.72 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFH20N100P Datasheet
Additional preview pages of the IXFH20N100P datasheet.

z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA z Easy to mount Space savings High power density.

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Published: May 30, 2011 |