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IXFH20N100P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

Overview: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFH20N100P IXFT20N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 20A 570mΩ 300ns Maximum Ratings 1000 1000 ± 30 ± 40 20 50 10 800 15 660 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g TO-247 (IXFH) TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 300 260 1.

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Key Features

  • z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA z Easy to mount Space savings High power density.

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