• Part: IXFL80N50Q2
  • Description: HiPerFET Power MOSFET Q2-Class
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 154.33 KB
Download IXFL80N50Q2 Datasheet PDF
IXYS
IXFL80N50Q2
Features Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generation Laser drivers Advantages 2500 V~ Electrical isolation ISOPLUS 264TM package for clip or spring mounting Space savings High power density ..net Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 500 3.0 5.5 ± 200 TJ = 125°C V V n A BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1m A VDS = VGS, ID = 8m A VGS = ±30 V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 40A, Note 1 100 μA 5 m A 66 mΩ © 2008 IXYS CORPORATION, All rights reserved DS99360B(05/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.15 VGS = 10V, VDS = 0.5 -...