IXFL80N50Q2 - HiPerFET Power MOSFET Q2-Class

Features

Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode.

IXYS Corporation

Datasheet Details

Part number	IXFL80N50Q2
Manufacturer	IXYS Corporation
File Size	154.33 KB
Description	HiPerFET Power MOSFET Q2-Class
Datasheet	IXFL80N50Q2 Datasheet
Additional preview pages of the IXFL80N50Q2 datasheet.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFET Q2-Class (Electrically Isolated Tab) IXFL80N50Q2 VDSS = ID25 = RDS(on) ≤ ≤ trr 500V 55A 66mΩ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC VISOL 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s Mounting force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 55 320 80 5 20 380 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..

Published: May 13, 2011 |