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TrenchT2TM HiperFETTM Power MOSFET
IXFH320N10T2 IXFT320N10T2
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = ID25 =
RDS(on) ≤
100V 320A 3.5mΩ
TO-247 (IXFH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062in.
IXFT320N10T2 Datasheet
