IXFT70N15
Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance
- easy to drive and to protect z Fast intrinsic Rectifier
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
VGS(th)
VDS = VGS, ID = 4 m A
4.0 V
V GS
=
±20
V, DC
V DS
=
±100 n A
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C TJ = 125°C
25 µA 750 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
28 m Ω
Advantages z Easy to mount z Space savings z High power density
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DS98583B(01/03)
Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK
Test Conditions
Characteristic Values
(T J
=
25°C, unless otherwise...
