IXYS Corporation

IXFT70N15 Datasheet Preview

IXFT70N15 Datasheet

HiPerFETTM Power MOSFETs

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Advanced Technical Information

HiPerFETTM

Power MOSFETs

IXFH 70N15

IXFT 70N15

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low trr

VDSS

ID25

RDS(on)

= 150 V

= 70 A

= 28 mW

trr £ 250ns

Symbol

VDSS

VDGR

VGS

VGSM

ID25

IDM

IAR

EAR

EAS

dv/dt

Tstg

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 MW

Continuous

Transient

TC = 25°C

TC = 25°C, pulse width limited by TJM

TC = 25°C

IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,

TJ £ 150°C, RG = 2 W

TC = 25°C

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

TO-247 AD

TO-268

Maximum Ratings

150 V

±20 V

±30 V

70 A

280 A

70 A

30 mJ

1.0 J

5 V/ns

300 W

-55 ... +150

150

-55 ... +150

°C

300 °C

1.13/10 Nm/lb.in.

Symbol

Test Conditions

(TJ = 25°C, unless otherwise specified)

VDSS

VGS = 0 V, ID = 250 mA

GS(th)

IGSS VGS = ±20 VDC, VDS = 0

IDSS

VDS = VDSS

VGS = 0 V

TJ = 25°C

TJ = 125°C

DS(on)

V = 10 V, I = 0.5 I

GS D D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

Characteristic Values

Min. Typ. Max.

150 V

2.0 4.0 V

±100 nA

25 mA

750 mA

28 mW

TO-247 AD (IXFH)

(TAB)

TO-268 (IXFT) Case Style

(TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

Features

• International standard packages

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

98583A (6/99)

1-2

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IXYS Corporation

IXFT70N15 Datasheet Preview

IXFT70N15 Datasheet

HiPerFETTM Power MOSFETs

No Preview Available !

www.DataSheet.co.kr

IXFH 70N15

IXFT 70N15

Symbol

gfs

Ciss

Coss

Crss

td(on)

td(off)

Qg(on)

Qgs

Qgd

RthJC

RthCK

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

VDS = 10 V; ID = 0.5 ID25, pulse test

VGS = 0 V, VDS = 25 V, f = 1 MHz

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

RG = 2 W (External)

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

(TO-247)

30 45

3600

1080

360

35 ns

52 ns

70 ns

23 ns

180 nC

28 nC

92 nC

0.42 K/W

0.25 K/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IS VGS = 0 V

ISM Repetitive;

VSD IF = IS, VGS = 0 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

70 A

280 A

1.5 V

QRM IF = 25A,-di/dt = 100 A/ms, VR = 25 V

IRM

250 ns

0.85 mC

TO-247 AD (IXFH) Outline

Dim. Millimeter

Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

- 4.5 -

0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-268AA (D3 PAK)

Dim. Millimeter

Min. Max.

A 4.9 5.1

A1 2.7 2.9

A2 .02 .25

b 1.15 1.45

b2 1.9 2.1

C .4 .65

D 13.80 14.00

E 15.85 16.05

E1 13.3 13.6

e 5.45 BSC

H 18.70 19.10

L 2.40 2.70

L1 1.20 1.40

L2 1.00 1.15

L3 0.25 BSC

L4 3.80 4.10

Inches

Min. Max.

.193 .201

.106 .114

.001 .010

.045 .057

.75 .83

.016 .026

.543 .551

.624 .632

.524 .535

.215 BSC

.736 .752

.094 .106

.047 .055

.039 .045

.010 BSC

.150 .161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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IXFT70N15 Datasheet

HiPerFETTM Power MOSFETs

IXFT70N15 Datasheet

HiPerFETTM Power MOSFETs

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