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IXYS Corporation

IXFV15N100PS Datasheet Preview

IXFV15N100PS Datasheet

Polar Power MOSFET HiPerFET

No Preview Available !

PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH15N100P
IXFV15N100P
IXFV15N100PS
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
M
d
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
Maximum Ratings
1000
1000
V
V
± 30 V
± 40 V
15 A
40 A
7.5 A
500 mJ
15
543
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300 °C
260 °C
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
Mounting force (PLUS 220)
11..65/2.5..14.6
N/lb.
TO-247
PLUS 220 types
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 100 nA
25 μA
1.0 mA
670 760 mΩ
VDSS = 1000V
ID25 = 15A
RDS(on) 760mΩ
trr 300ns
PLUS220 (IXFV)
G
DS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
TO-247 (IXFH)
D (TAB)
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
w©w2w008.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll rights reserved
DS99891A(4/08)




IXYS Corporation

IXFV15N100PS Datasheet Preview

IXFV15N100PS Datasheet

Polar Power MOSFET HiPerFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate input resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247, PLUS220)
IXFH15N100P IXFV15N100P
IXFV15N100PS
Characteristic Values
Min. Typ.
Max.
PLUS220 (IXFV) Outline
6.5 10.5
S
5140
322
43
pF
pF
pF
1.20
Ω
41 ns
44 ns
44 ns
58 ns
97 nC
38 nC
42 nC
0.21
0.23 °C/W
°C/W
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS VGS = 0V
ISM Repetitive
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IF = 7.5A, -di/dt = 100A/μs
IRM VR = 100V, VGS = 0V
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
Characteristic Values
Min. Typ.
Max.
15 A
60 A
1.5 V
300 ns
0.6 μC
7A
TO-247 (IXFH) Outline
P
PLUS220SMD (IXFV_S) Outline
e
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2


Part Number IXFV15N100PS
Description Polar Power MOSFET HiPerFET
Maker IXYS Corporation
Total Page 4 Pages
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