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IXYS Corporation

IXFX150N15 Datasheet Preview

IXFX150N15 Datasheet

HiPerFET Power MOSFETs

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HiPerFETTM
Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXFK 150N15
IXFX 150N15
VDSS = 150 V
ID25 = 150 A
=RDS(on) 12.5 mW
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
I
DM
IAR
E
AR
EAS
dv/dt
P
D
TJ
TJM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
TC = 25°C
T
C
= 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
150 V
150 V
±20 V
±30 V
150 A
76 A
600 A
150 A
60 mJ
3J
5 V/ns
560 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247TM
(IXFX)
G
D
TO-264 AA (IXFK)
D (TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
V = 0 V, I = 3mA
GS D
V = V , I = 8mA
DS GS D
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
150 V
2.0 4.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 mA
2 mA
12.5 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DataSheet4 U .com
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IXYS Corporation

IXFX150N15 Datasheet Preview

IXFX150N15 Datasheet

HiPerFET Power MOSFETs

No Preview Available !

www.DataSheet4U.com
IXFK 150N15
IXFX 150N15
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 60A
DS D
Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
50 75
9100
2600
1200
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
50
60
110
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
360
65
190
nC
nC
nC
0.22 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = 100A, VGS = 0 V, Note 1
trr
QRM IF = 50A,-di/dt = 100 A/ms, VR = 50 V
IRM
150 A
600 A
1.5 V
250 ns
1.1 mC
13 A
PLUS247TM (IXFX) Outline)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A 2.29 2.54
1
A 1.91 2.16
2
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA Outline
Note: 1. Pulse width limited by T
JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
© 2000 IXYS All rights reserved
DataSheet4 U.com
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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Part Number IXFX150N15
Description HiPerFET Power MOSFETs
Maker IXYS Corporation
Total Page 2 Pages
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