* Internationalstandardpackages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Symbol V DSS V GS(th
IXFX150N15 Datasheet (112.65 KB)
IXFX150N15
IXYS Corporation
112.65 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFK 150N15 IXFX 150N15 VDSS = 150 V ID25 = 150 A = RDS(on) 12.5 mW trr £ 250 ns .
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