IXGA7N60BD1 Datasheet (IXYS Corporation)

IXGA7N60BD1, HiPerFAST IGBT

Advanced Technical Information HiPerFASTTM IGBT with Diode IXGA 7N60BD1 IXGP 7N60BD1 VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.0 V = 150ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 18 Ω Clamped inductive load @ 0.8 VCES TC = 25°C Maximum Ratings 600 600 ±20 ±30 14 7 56 ICM = 14 80 -55 +150 150 -55 +150 300 M3

IXGA7N60BD1 Features

* G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md www.DataSheet4U.net

* International standard packages 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g JEDEC TO-263 surface mountable and JEDEC TO-220 AB