Datasheet Details
- Part number
- IXGA90N33TC
- Manufacturer
- IXYS Corporation
- File Size
- 138.81 KB
- Datasheet
- IXGA90N33TC-IXYSCorporation.pdf
- Description
- IGBTs
IXGA90N33TC Description
Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1.IXGA90N33TC Features
* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1.82 1.95 Characteristic Values Min. Typ. Max. 330 3IXGA90N33TC Applications
* IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC= 25°C (Chip Capability) Lead Current Limit TC = 110°C TC
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