IXGH30N120B3D1 Description
+150 1.13 / 10 300 260 6 4 °C °C °C Nm/lb.in. °C °C g g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless Min. otherwise specified) Typ.
IXGH30N120B3D1 is GenX3 1200V IGBTs manufactured by IXYS .
+150 1.13 / 10 300 260 6 4 °C °C °C Nm/lb.in. °C °C g g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless Min. otherwise specified) Typ.