IXGH30N120C3H1 Description
+150 °C °C °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 100 μA 1.5 mA ±100 nA 3.6 4.2 V 3.2 V TO-247AD G C E TAB G = Gate E = Emitter C = Collector TAB = Collector.
IXGH30N120C3H1 is High speed PT IGBTs manufactured by IXYS .
+150 °C °C °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 100 μA 1.5 mA ±100 nA 3.6 4.2 V 3.2 V TO-247AD G C E TAB G = Gate E = Emitter C = Collector TAB = Collector.