* International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 µA,
IXGH30N60 Datasheet (82.71 KB)
IXGH30N60
IXYS Corporation
82.71 KB
Low vce(sat) igbt.
VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbo.
📁 Related Datasheet
IXGH30N60A Low VCE(sat) IGBT (IXYS Corporation)
IXGH30N60B HiPerFASTTM IGBT (IXYS Corporation)
IXGH30N60B2 HiPerFAST IGBT (IXYS Corporation)
IXGH30N60B2D1 IGBT (IXYS)
IXGH30N60BD1 IGBT (IXYS Corporation)
IXGH30N60BU1 HiPerFAST IGBT (IXYS Corporation)
IXGH30N60C2 HiPerFAST IGBT (IXYS)
IXGH30N60C2D1 HiPerFAST IGBT (IXYS)
IXGH30N60C3 GenX3 600V IGBT (IXYS Corporation)
IXGH30N60C3C1 High-Speed PT IGBT (IXYS)
