IXGH32N50BU1S Description
Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; +150 300 1.13/10 TO-247 SMD TO-247 AD 4 6 V V V V A A A A W °C °C °C °C Nm/lb.in.
IXGH32N50BU1S Key Features
- drive simplicity
IXGH32N50BU1S is HiPerFAST IGBT manufactured by IXYS .
Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; +150 300 1.13/10 TO-247 SMD TO-247 AD 4 6 V V V V A A A A W °C °C °C °C Nm/lb.in.