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IXYS Corporation

IXGP30N120B3 Datasheet Preview

IXGP30N120B3 Datasheet

GenX3 1200V IGBTs

No Preview Available !

GenX3TM 1200V
IGBTs
High-Speed Low-Vsat PT
IGBTs 3-20 kHz Switching
IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IICCM110
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
110°C
25°C,
1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247www.DataSheet4U.net
Maximum Ratings
1200
1200
V
V
± 20
± 30
V
V
60 A
30 A
150 A
ICM = 60
VCE VCES
300
A
W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10
Nm/lb.in.
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
100 μA
1 mA
±100 nA
2.96
2.95
3.5 V
V
VCES
IC110
VCE(sat)
tfi(typ)
= 1200V
= 30A
£ 3.5V
= 204ns
TO-263 (IXGA)
G
E
C (Tab)
TO-220 (IXGP)
GCE
TO-247 (IXGH)
C (Tab)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2009 IXYS CORPORATION, All Rights Reserved
DS99730B(10/09)




IXYS Corporation

IXGP30N120B3 Datasheet Preview

IXGP30N120B3 Datasheet

GenX3 1200V IGBTs

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
IC = 30A, VGE = 15V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 0.8 VCES, RG = 5Ω
Notes 2
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
RthCS
Inductive load, TJ = 125°C
IC = 30A,VGE = 15V
VCE = 0.8 VCES,RG = 5Ω
Notes 2
TO-220
TO-247
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Characteristic Values
Min. Typ. Max.
TO-220 (IXGP) Outline
11 19
S
1750
120
46
pF
pF
pF
87
15
39
16
37
3.47
127
204
2.16
nC
nC
nC
ns
ns
mJ
200 ns
380 ns
4.0 mJ
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
18 ns
38 ns
6.70 mJ
216 ns
255 ns
5.10 mJ
0.42 °C/W
0.50 °C/W
0.21 °C/W
TO-247 (IXGH) AD Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
www.DataSheet4U.net
TO-263 (IXGA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
8.64
8.00
0.74
1.40
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016
.045
.340
.280
.029
.055
.380
.320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
1 = Gate
2 = Collector
3 = Emitter
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGP30N120B3
Description GenX3 1200V IGBTs
Maker IXYS Corporation
Total Page 6 Pages
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