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IXYS Corporation

IXGP48N60B3 Datasheet Preview

IXGP48N60B3 Datasheet

GenX3 600V IGBT

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GenX3TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGA48N60B3
IXGP48N60B3
IXGH48N60B3
VCES =
IC110 =
VCE(sat)
600V
48A
1.8V
TO-263 (IXGA)
Symbol
VCES
VCGR
VGES
VGEM
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load @ 600V
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-220)
TO-263
TO-220
TO-247
www.DataSheet4U.net
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 32A, VGE = 15V, Note 1
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
48
280
ICM = 120
A
A
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
3.0
6.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
25 μA
250 μA
±100 nA
1.8 V
G
E
TO-220 (IXGP)
(TAB)
GCE
TO-247 (IXGH)
(TAB)
G
CE
(TAB)
G = Gate
E = Emitter
Features
C = Collector
TAB = Collector
z Optimized for low conduction and
switching losses
z Square RBSOA
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2008 IXYS CORPORATION, All rights reserved
DS99938A(05/08)




IXYS Corporation

IXGP48N60B3 Datasheet Preview

IXGP48N60B3 Datasheet

GenX3 600V IGBT

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 480V, RG = 5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 480V, RG = 5Ω
RthJC
RthCS
(TO-247)
(TO-220)
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
Characteristic Values
Min. Typ. Max.
TO-247 (IXGH) Outline
28 46
S
3980
170
45
pF
pF
pF
P
115 nC
21 nC
40 nC
22
25
0.84
130
116
0.66
19
25
1.71
190
157
1.30
0.25
0.50
ns
ns
mJ
200 ns
200 ns
1.20 mJ
ns
ns
mJ
ns
ns
mJ
0.42 °C/W
°C/W
°C/W
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-220 (IXGP) Outline
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
TO-263 (IXGA) Outline
www.DataSheet4U.net
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGP48N60B3
Description GenX3 600V IGBT
Maker IXYS Corporation
Total Page 6 Pages
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