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IXYS Corporation

IXGP48N60C3 Datasheet Preview

IXGP48N60C3 Datasheet

GenX3 600V IGBT

No Preview Available !

GenX3TM 600V IGBT
High Speed PT IGBTs for
40-100kHz switching
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
=
=
25°C (
110°C
Limited
by
Leads)
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load @ 600V
PC TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
Md
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-247&TO-220)
Weight TO-247www.DataSheet4U.net
TO-220
TO-263
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 125°C
Maximum Ratings
600 V
600 V
± 20 V
± 30 V
75
48
250
30
300
ICM = 100
A
A
A
A
mJ
A
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
3.0
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min.
Typ. Max.
600 V
3.0 5.5 V
25 μA
250 μA
±100 nA
2.3 2.5 V
1.8 V
© 2009 IXYS CORPORATION, All rights reserved
VCES =
IC110 =
VCE(sat)
tfi(typ)
=
600V
48A
2.5V
38ns
TO-263 (IXGA)
G
E
TO-247 (IXGH)
(TAB)
G
CE
TO-220 (IXGP)
(TAB)
GCE
G = Gate
E = Emitter
Features
(TAB)
C = Collector
TAB = Collector
z Optimized for Low Switching Losses
z Square RBSOA
z Avalanche Rated
z Fast Switching
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
DS99953A(01/09)




IXYS Corporation

IXGP48N60C3 Datasheet Preview

IXGP48N60C3 Datasheet

GenX3 600V IGBT

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
RthJC
RthCS
(TO-247)
(TO-220)
IXGA48N60C3 IXGH48N60C3
IXGP48N60C3
Characteristic Values
Min. Typ. Max.
TO-247 (IXGH) Outline
20 30
S
1960
207
66
pF
pF
pF
P
77 nC
16 nC
32 nC
19
26
0.41
60
38
0.23
19
26
0.65
92
95
0.57
0.21
0.50
ns
ns
mJ
100 ns
ns
0.42 mJ
ns
ns
mJ
ns
ns
mJ
0.42 °C/W
°C/W
°C/W
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-220 (IXGP) Outline
Note 1: Pulse Test, t 300μs; Duty Cycle, d 2%.
www.DataSheet4U.net
TO-263 (IXGA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGP48N60C3
Description GenX3 600V IGBT
Maker IXYS Corporation
Total Page 6 Pages
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