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IXYS Corporation

IXGP7N60B Datasheet Preview

IXGP7N60B Datasheet

HiPerFAST IGBT

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HiPerFASTTM IGBT
IXGA 7N60B
IXGP 7N60B
VCES
IC25
VCE(sat)
tfi
= 600 V
= 14 A
= 2V
= 150 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22
Clamped inductive load, L = 300 µH
PC TC = 25°C
T
J
TJM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
600
±20
±30
14
7
30
ICM = 14
@ 0.8 VCES
54
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Md
Mounting torque, (TO-220)
Μ3 0.45/4
Nm/lb.in.
Μ3.5 0.55/5
Weight
TO-220
TO-263
4g
2g
Symbol
BVCES
V
GE(th)
I
CES
IGES
V
CE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
600 V
2.5 5.5 V
100 µA
500 µA
±100 nA
1.8 2.0 V
TO-220AB (IXGP)
GCE
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
Medium frequency IGBT
High current handling capability
HiPerFASTTM HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
© 2002 IXYS All rights reserved
98563A (06/02)




IXYS Corporation

IXGP7N60B Datasheet Preview

IXGP7N60B Datasheet

HiPerFAST IGBT

No Preview Available !

Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
E
on
td(off)
tfi
Eoff
t
d(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES, RG = Roff = 22
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 22
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
(TO-220)
37
S
500
50
17
25
5
10
9
10
0.07
100
150
0.3
10
15
0.15
200
250
0.6
0.25
pF
pF
pF
nC
nC
nC
ns
ns
mJ
200 ns
250 ns
0.6 mJ
ns
ns
mJ
ns
ns
mJ
2.3 K/W
K/W
IXGA 7N60B
IXGP 7N60B
TO-220 AB Outline
Pins:
1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 AA Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number IXGP7N60B
Description HiPerFAST IGBT
Maker IXYS Corporation
Total Page 2 Pages
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