IXGP8N100 Description
IGBT Preliminary data sheet IXGA 8N100 IXGP 8N100 VCES = 1000 V = 16 A IC25 VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C.
IXGP8N100 Key Features
- International standard packages JEDEC TO-220AB and TO-263AA
- Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity