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HiPerFASTTM IGBT with Diode Lightspeed Series
Preliminary data
IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V
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Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 48 24 80 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
TO-247 AD (IXGH)
C (TAB) G C E C = Collector, TAB = Collector
W °C °C °C °C
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.
IXGT24N60CD1 Datasheet
