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IXYS Corporation

IXGT24N60CD1 Datasheet Preview

IXGT24N60CD1 Datasheet

HiPerFAST IGBT

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HiPerFASTTM IGBT
with Diode
Lightspeed Series
IXGH 24N60CD1
IXGT 24N60CD1
VCES
IC25
VCE(sat)
= 600 V
= 48 A
= 2.5 V
Preliminary data
www.DataSheetS4Uym.cobmol
Test Conditions
V
CES
VCGR
VGES
V
GEM
IC25
I
C110
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
T
C
= 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
PC TC = 25°C
T
J
TJM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3)
Maximum Ratings
600 V
600 V
±20 V
±30 V
48 A
24 A
80 A
ICM = 48
@ 0.8 VCES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
TO-247
TO-268
1.13/10 Nm/lb.in.
6g
4g
Symbol
BVCES
V
GE(th)
I
CES
IGES
V
CE(sat)
Test Conditions
IC = 750 mA, VGE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C110 GE
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600 V
T
J
=
25°C
TJ = 150°C
2.5 5.5 V
200 mA
3 mA
±100 nA
2.1 2.5 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-247 and surface
mountable TO-268
• High frequency IGBT
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
• Fast recovery expitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98603A (4/99)
1-5




IXYS Corporation

IXGT24N60CD1 Datasheet Preview

IXGT24N60CD1 Datasheet

HiPerFAST IGBT

No Preview Available !

IXGH 24N60CD1
IXGT 24N60CD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC110; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
C
oes
Cres
Qg
www.DataSheetQ4Uge.com
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = I , V = 15 V, V = 0.5 V
C C110 GE
CE CES
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
(TO-247)
9 17
S
1500
170
40
pF
pF
pF
55 nC
13 nC
17 nC
15 ns
25 ns
75 140 ns
60 110 ns
0.24 0.36 mJ
15 ns
25 ns
1 mJ
130 ns
110 ns
0.6 mJ
0.83 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
F
IRM
trr
RthJC
I = I , V = 0 V,
F C110 GE
T
J
= 150°C
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IF = IC110, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
TJ = 100°C 100
TJ = 25°C 25
1.6 V
2.5 V
A
ns
ns
0.9 K/W
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5


Part Number IXGT24N60CD1
Description HiPerFAST IGBT
Maker IXYS Corporation
Total Page 5 Pages
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