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IXYS Corporation

IXGT28N60B Datasheet Preview

IXGT28N60B Datasheet

Ultra-low V Ce(sat) Igbt

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Ultra-Low VCE(sat)
IGBT with Diode
Preliminary data
IXGH 28N60B
IXGT 28N60B
VCES =
IC25 =
VCE(sat) =
600 V
40 A
2.0 V
www.DataSheetS4Uym.cobmol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
PC TC = 25°C
T
J
TJM
Tstg
Md Mounting torque (M3) TO-247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
40 A
28 A
80 A
ICM = 56
@ 0.8 VCES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
4g
Symbol
BV
CES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
I
C
=
750
mA,
V
GE
=
0
V
IC = 250 mA, VCE = VGE
VCE = 0.8 • VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
T
J
=
125°C
600
2.5
V
5.5 V
100 mA
500 mA
±100 nA
2.0 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C (TAB)
G
C
E
G = Gate,
E = Emitter,
TAB
C = Collector,
TAB = Collector
Features
• International standard packages
• Low VCE(sat)
- for minimum on-state conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Low losses, high efficiency
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98570A (7/00)
1-2




IXYS Corporation

IXGT28N60B Datasheet Preview

IXGT28N60B Datasheet

Ultra-low V Ce(sat) Igbt

No Preview Available !

IXGH 28N60B
IXGT 28N60B
Symbol
gfs
Cies
C
oes
Cres
Qg
www.DataSheetQ4Uge.com
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
9 14
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
1500
130
40
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
80 100 nC
15 30 nC
30 40 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
15 ns
25 ns
200 400 ns
200 400 ns
3 6 mJ
15 ns
25 ns
0.2 mJ
400 ns
400 ns
6 mJ
TO-247
0.83 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
© 2000 IXYS All rights reserved
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IXGT28N60B
Description Ultra-low V Ce(sat) Igbt
Maker IXYS Corporation
Total Page 2 Pages
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