Datasheet4U Logo Datasheet4U.com

IXGT28N60B - Ultra-low V Ce(sat) Igbt

Key Features

  • International standard packages.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT28N120BD1 High Voltage IGBT IXYS
IXGT20N100 IGBT IXYS
IXGT20N120B High Voltage IGBT IXYS
IXGT20N140C3H1 GenX3 1400V IGBTs IXYS
IXGT24N170A High Voltage IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT28N60BD1 Low VCE(sat) IGBT
IXGT28N120B High Voltage IGBT
IXGT28N30 HiPerFAST IGBT
IXGT28N30A HiPerFAST IGBT
IXGT28N30B HiPerFAST IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.