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IXGT28N60B

The IXGT28N60B is Ultra-low V Ce(sat) Igbt designed by IXYS Corporation.

Product Overview

IXYS Corporation

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IXGT28N60B Ultra-low V Ce(sat) Igbt by IXYS Corporation - Datasheet Preview — Datasheet preview – IXGT28N60B

Datasheet Details

Part number	IXGT28N60B
Manufacturer	IXYS Corporation
File Size	84.24 KB
Description	Ultra-low V Ce(sat) Igbt
Datasheet	IXGT28N60B_IXYSCorporation.pdf
Additional preview pages of the IXGT28N60B datasheet.

Product details

Features

International standard packages.
Low VCE(sat) - for minimum on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

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Published: Nov 3, 2008 |