IXGT32N60BD1 Description
+150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter,.
IXGT32N60BD1 Key Features
- International standard packages
IXGT32N60BD1 is HiPerFAST IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGT32N60C | IGBT |
| IXGT30N120B3D1 | GenX3 1200V IGBTs |
| IXGT30N60B | HiPerFASTTM IGBT |
| IXGT30N60B2 | HiPerFAST IGBT |
| IXGT30N60BD1 | HiPerFASTTM IGBT with Diode |
+150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter,.