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IXYS Corporation

IXGT32N60BD1 Datasheet Preview

IXGT32N60BD1 Datasheet

HiPerFAST IGBTwith Diode

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HiPerFASTTM IGBT
with Diode
IXGH 32N60BD1
IXGT 32N60BD1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 60 A
= 2.3 V
= 85 ns
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22
Clamped inductive load, L = 100 µH
PC TC = 25°C
T
J
TJM
T
stg
Md Mounting torque (M3) TO-247AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247AD
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
60 A
32 A
120 A
ICM = 64
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
4g
Symbol
BVCES
V
GE(th)
ICES
IGES
V
CE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 150°C
600
2.5
V
5.0 V
200 µA
3 mA
±100 nA
2.3 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C
(TAB)
G
CE
C
(TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
Internationalstandardpackages
High frequency IGBT and antiparallel
FRED in one package
Highcurrenthandlingcapability
HiPerFASTTM HDMOSTM process
MOS Gate turn-on
-drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Space savings (two devices in one
package)
High power density
Suitableforsurfacemounting
Very low switching losses for high
frequency applications
Easy to mount with 1 screw,TO-247
(insulated mountingscrewhole)
© 2002 IXYS All rights reserved
98749B (03/02)




IXYS Corporation

IXGT32N60BD1 Datasheet Preview

IXGT32N60BD1 Datasheet

HiPerFAST IGBTwith Diode

No Preview Available !

IXGH 32N60BD1
IXGT 32N60BD1
Symbol
g
fs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
E
off
td(on)
tri
Eon
t
d(off)
tfi
E
off
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
TO-247
25 S
2700
240
50
pF
pF
pF
110 nC
22 nC
40 nC
25 ns
20 ns
100 200 ns
80 150 ns
0.6 1.2 mJ
25 ns
25 ns
1 mJ
120 ns
120 ns
1.2 mJ
0.62 K/W
0.25
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
t
rr
RthJC
IF = IC90, VGE = 0 V,
TJ = 150°C
Pulse test, t 300 µs, duty cycle d 2 % TJ = 25°C
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
VR = 360 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
TJ = 125°C
TJ = 25°C
6
100
25
1.6 V
2.5 V
A
ns
ns
1.0 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number IXGT32N60BD1
Description HiPerFAST IGBTwith Diode
Maker IXYS Corporation
Total Page 2 Pages
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