IXGT35N120C, IXGH35N120C Datasheet (IXYS Corporation)

IXGT35N120C - IGBT Lightspeed Series

Advance Technical Information IGBT Lightspeed Series IXGH 35N120C IXGT 35N120C VCES = 1200 V = 70 A IC25 VCE(sat) = 4.0 V tfi(typ) = 115 ns Symbol www.DataSheet4U.com V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 W Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 90 @ 0.8 VCES 300 -55 +150 150 -55 +150 300 260 V V V V A A A A TO-268 (IXGT)

IXGT35N120C Features

* G = Gate, E = Emitter, Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g

* International standard packages JEDEC TO-268 surface a

IXGT35N120C, IXGH35N120C Datasheet - IXYS Corporation

IXGT35N120C - IGBT Lightspeed Series

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