Datasheet Summary
IXKC 20N60C
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
VDSS
= 600 V
ID25
= 15 A
RDS(on) max = 190 mΩ
ISOPLUS220TM
E72873 q isolated tab
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR
Conditions TVJ = 25°C
TC = 25°C TC = 90°C single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C
Maximum Ratings
600 V
± 20
15 A 10.5 A
690 mJ 1 mJ
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 10 V; ID = 16 A VDS = VGS; ID...
