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IXKC20N60C - CoolMOS Power MOSFET

Features

  • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF).
  • CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
  • Enhanced total power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ ISOPLUS220TM G D S E72873 q isolated tab MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C Maximum Ratings 600 V ± 20 V 15 A 10.5 A 690 mJ 1 mJ Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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