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IXSK50N60AU1 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: IGBT with Diode bi Pack Short Circuit SOA Capability IXSK 50N60AU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.7 V .. Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C, limited by leads T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ...

Key Features

  • q q q q q Mounting torque 0.9/6 Nm/lb. in. 10 300 g °C q q Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s International standard package JEDEC TO-264 AA Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package 2nd generation.

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IXSK50N60AU1 Distributor