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IXSK80N60B - High Current IGBT Short Circuit SOA Capability

Features

  • ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity.

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = = = = 25°C 90°C 90°C 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) Maximum Ratings 600 600 ± 20 ± 30 160 80 75 300 ICM = 160 @ 0.8 VCES 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A A A µs W °C °C °C °C PLUS 247TM (IXSX) G (TAB) C E TO-264 AA (IXSK) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.
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