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IXSX80N60B - High Current IGBT Short Circuit SOA Capability

Download the IXSX80N60B datasheet PDF (IXSK80N60B included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high current igbt short circuit soa capability.

Features

  • ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity.

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Note: The manufacturer provides a single datasheet file (IXSK80N60B_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = = = = 25°C 90°C 90°C 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) Maximum Ratings 600 600 ± 20 ± 30 160 80 75 300 ICM = 160 @ 0.8 VCES 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A A A µs W °C °C °C °C PLUS 247TM (IXSX) G (TAB) C E TO-264 AA (IXSK) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.
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