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IXTA180N085T7 - Power MOSFET

Key Features

  • z International Standard Package z 175°C Operating Temperature z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription for IXTA180N085T7 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA180N085T7. For precise diagrams, and layout, please refer to the original PDF.

TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ TO-263 (7-lead) Symbol VD...

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ifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Maximum Ratings 85 85 V V ± 20 V 180 A 160 A 480 A 25 A 1.0 J 430 W -55 ... +175 175 -55 ...