Full PDF Text Transcription for IXTA220N075T (Reference)
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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N075T IXTP220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ S...
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IXTA220N075T IXTP220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 75 V 75 V ± 20 V 220 A 75 A 600 A 25 A 1.0 J TO-263 (IXTA) G S TO-220 (IXTP) (TAB) 3 V/ns 480 -55 ... +175 175 -55 .
IXTA220N075T Datasheet
