IXTA2N80 mosfet equivalent, high voltage mosfet.
Maximum lead temperature for soldering
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductanc.
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0.
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