°C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS)
rated °C Low package inductance °C - easy to drive and to protect
g 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 100 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values Min. Typ. Max. 10.
Full PDF Text Transcription for IXTA80N10T7 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTA80N10T7. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA80N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 80 14 V A mΩ Symbol VDSS VDGR...
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lanche Rated VDSS = ID25 = RDS(on) ≤ 100 80 14 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 15 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 100 V 100 V ± 30 80 220 25 400 3 V A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 230 -55 ... +175 175 -55 ...
IXTA80N10T7 Datasheet
