* D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Lowdraintotabcapacitance(
IXTC13N50
IXYS Corporation
1.03 MB
Power mosfet.
Power MOSFET ISOPLUS220TM IXTC 13N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V.
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