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IXYS Corporation
IXYS Corporation

IXTC200N10T Datasheet Preview

IXTC200N10T Datasheet

Power MOSFET

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IXTC200N10T pdf
TrenchMVTM Power
MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
IXTC200N10T
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
Maximum Ratings
100
100
± 30
V
V
V
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
101
75
500
40
1.5
160
-55 ... +175
175
-55 ... +175
A
A
A
A
J
W
°C
°C
°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300 °C
260 °C
50/60Hz, t = 1 minute, IISOL < 1mA, RMS
2500
Mounting force
11..65 / 2.5..14.6
V
N/lb.
ISOPLUS220
2g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
5 μA
250 μA
6.3 mΩ
VDSS =
ID25 =
RDS(on)
100V
101A
6.3mΩ
ISOPLUS220
E153432
G DS
G = Gate
S = Source
Isolated back surface
D = Drain
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
2500V electrical isolation
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99653A(10/08)



IXYS Corporation
IXYS Corporation

IXTC200N10T Datasheet Preview

IXTC200N10T Datasheet

Power MOSFET

No Preview Available !

IXTC200N10T pdf
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RthJC
RthCH
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, Pulse width limited by TJM
VSD IF = 50A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 100A, VGS = 0V,-di/dt = 100A/μs
VR = 50V
Characteristic Values
Min. Typ. Max.
60 96
S
9400
1087
140
pF
pF
pF
35 ns
31 ns
45 ns
34 ns
152 nC
47 nC
47 nC
0.96 °C/W
0.21 °C/W
IXTC200N10T
ISOPLUS220 (IXTC) Outline
1.Gate 2. Drain
3.Source
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1, 2 and 3.
Characteristic Values
Min. Typ. Max.
200 A
500 A
1.0 V
76 ns
205 nC
5.4 A
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXTC200N10T
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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IXTC200N10T pdf
IXTC200N10T Datasheet PDF
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