Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
Easy to mount Space savings High power density.
Full PDF Text Transcription for IXTC200N10T (Reference)
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IXTC200N10T. For precise diagrams, and layout, please refer to the original PDF.
TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM ...
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ted IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 101 75 500 40 1.5 160 -55 ... +175 175 -55 ... +175 A A A A J W °C °C °C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds 300 °C 260 °C 50/60Hz, t = 1 minute, IISOL < 1mA, RMS 2500 Mounting force 11..65 / 2.5..14.6 V N/lb.
IXTC200N10T Datasheet
