* Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Swi
IXTC200N10T Datasheet (179.86 KB)
IXTC200N10T
IXYS Corporation
179.86 KB
Power mosfet.
TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS.
📁 Related Datasheet
IXTC200N10T N-Channel MOSFET (INCHANGE)
IXTC200N075T N-Channel MOSFET (INCHANGE)
IXTC200N085T N-Channel MOSFET (INCHANGE)
IXTC200N085T Power MOSFET (IXYS Corporation)
IXTC220N055T N-Channel MOSFET (INCHANGE)
IXTC220N075T N-Channel MOSFET (INCHANGE)
IXTC220N075T Power MOSFET (IXYS Corporation)
IXTC240N055T N-Channel MOSFET (INCHANGE)
IXTC240N055T Power MOSFET (IXYS Corporation)
IXTC250N075T Power MOSFET (IXYS Corporation)
