IXTC250N075T - Power MOSFET

Features

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

IXTC250N075T Power MOSFET by IXYS Corporation - Datasheet Preview — Datasheet preview – IXTC250N075T

Datasheet Details

Part number	IXTC250N075T
Manufacturer	IXYS (now Littelfuse)
File Size	137.73 KB
Description	Power MOSFET
Datasheet	IXTC250N075T Datasheet
Additional preview pages of the IXTC250N075T datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM IXTC250N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 75 128 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 75 V 75 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 128 A 75 A 600 A 25 A 1.0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS T J ≤ 175°C, R G = 3.3 Ω T C = 25°C 3 V/ns 160 -55 ... +175 175 -55 ... +175 W °C °C °C 1.6 mm (0.062 in.

Published: Feb 13, 2015 |