* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications Symbol Test
IXTC75N10 Datasheet (98.92 KB)
IXTC75N10
IXYS Corporation
98.92 KB
N-channel mosfet.
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION MegaMOSTMFET N-Channel Enhancement Mode IXTC 75N10 VDSS = 100 V = 72 A ID25 RDS(on) = 20 mΩ Sym.
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