Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID =25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 55 V
2.0 4.0 V
± 200 nA
5 µA 250 µA 3.5 5.0 m Ω
Advantages Easy to.
Full PDF Text Transcription for IXTH182N055T (Reference)
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IXTH182N055T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 182 5.0 V A mΩ T...
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ement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 182 5.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 55 55 ± 20 182 75 490 25 1.0 V V V A A A A J 3 V/ns G D TO-3P (IXTQ) S G D S (TAB) (TAB) 360 W -55 ... +175
IXTH182N055T Datasheet
