* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V,
IXTH182N055T Datasheet (202.08 KB)
IXTH182N055T
IXYS Corporation
202.08 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
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