Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density.
Full PDF Text Transcription for IXTH250N075T (Reference)
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IXTH250N075T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH250N075T IXTQ250N075T VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ T...
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IXTH250N075T IXTQ250N075T VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.
IXTH250N075T Datasheet
