Datasheet Summary
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MegaMOSTMFET
IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode
VDSS 300 V 300 V 300 V
ID25 35 A 40 A 40 A
RDS(on) 0.10 Ω 0.085 Ω 0.088 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 35N30 40N30 35N30 40N30
Maximum Ratings 300 300 ±20 ±30 35 40 140 160 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D G = Gate, S = Source,
D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Features l l l...
