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IXTH52P10P - P-Channel MOSFET

Download the IXTH52P10P datasheet PDF. This datasheet also covers the IXTA52P10P variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Fast Intrinsic Diode z Dynamic dv/dt Rated z Avalanche Rated z Rugged PolarPTM Process z Low QG and Rds(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA52P10P-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P TO-263 AA (IXTA) TO-220AB (IXTP) D G S D (Tab) GD S D (Tab) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings -100 V -100 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 52 A -130 A - 52 A 1.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 -55 ... +150 150 -55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Torque (TO-3P,TO-220,TO-247) 1.13/10 Nm/lb.in. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.