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International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting torque TO-264
300 °C 260 °C 1.13/10 Nm/lb. in. 10 g
Advantages
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Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±20 VDC, VDS = 0 VDS = VDSS V.
Full PDF Text Transcription for IXTK102N30P (Reference)
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IXTK102N30P. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID...
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DSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 300 300 ±20 ±30 102 75 250 60 60 2.5 10 700 -55 ... +150 150 -55 ...
IXTK102N30P Datasheet
