IXTK180N15 Datasheet (IXYS Corporation)

IXTK180N15, Power MOSFET

Advance Technical Information www.DataSheet4U.com High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 180N15 VDSS ID25 RDS(on) = 150 V = 180 A = 10 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VD

IXTK180N15 Features

* 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwis