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IXYS Corporation

IXTK200N10P Datasheet Preview

IXTK200N10P Datasheet

PolarHTTM Power MOSFET

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PolarHTTM
Power MOSFET
Advanced Technical Information
www.DataSheet4U.com
IXTK 200N10P
VDSS =
ID25 =
=RDS(on)
100 V
200 A
7.5 m
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings TO-264(SP) (IXTK)
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
100 V
100 V
±20 V
200 A
75 A
400 A
60 A
100 mJ
4J
10 V/ns
800 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
10 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 500µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 400A
Pulse test, t 300 µs, duty cycle d 2 %
7.5 m
5.5 m
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99186(05/04)




IXYS Corporation

IXTK200N10P Datasheet Preview

IXTK200N10P Datasheet

PolarHTTM Power MOSFET

No Preview Available !

Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
60 97
7600
2900
860
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 (External)
30 ns
35 ns
150 ns
90 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
240 nC
50 nC
135 nC
0.15
0.18 K/W
K/W
IXTK 200N10P
www.DataSheet4U.com
TO-264(SP) Outline (IXTK)
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise
typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
200 A
400 A
1.5 V
trr IF = 25 A
-di/dt = 100 A/µs
QRM VR = 100 V
120 ns
3.3 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585


Part Number IXTK200N10P
Description PolarHTTM Power MOSFET
Maker IXYS Corporation
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IXTK200N10P Datasheet PDF





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