• Part: IXTK200N10P
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 203.99 KB
Download IXTK200N10P Datasheet PDF
IXYS
IXTK200N10P
Features l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99186E(10/05) IXTK 200N10P Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 60 97 D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 7600 p F 2900 p F 860 p F VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 240 n C 50 n C 135 n C 0.18° C/W ° C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VGS = 0...