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IXTP130N10T - Power MOSFET

Download the IXTP130N10T datasheet PDF. This datasheet also covers the IXTA130N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density.

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Note: The manufacturer provides a single datasheet file (IXTA130N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP130N10T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP130N10T. For precise diagrams, and layout, please refer to the original PDF.

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID2...

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25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 100 100 ± 30 130 75 350 65 500 360 -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 3.0 2.5 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in.

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INCHANGE Logo IXTP130N10T N-Channel MOSFET INCHANGE

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