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IXTP220N075T - Power MOSFET

Download the IXTP220N075T datasheet PDF. This datasheet also covers the IXTA220N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 3.9 4.5 mΩ Advantages Easy to mou.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA220N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP220N075T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP220N075T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N075T IXTP220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ S...

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IXTA220N075T IXTP220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 75 V 75 V ± 20 V 220 A 75 A 600 A 25 A 1.0 J TO-263 (IXTA) G S TO-220 (IXTP) (TAB) 3 V/ns 480 -55 ... +175 175 -55 .