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IXYS Corporation
IXYS Corporation

IXTP76N075T Datasheet Preview

IXTP76N075T Datasheet

Power MOSFET

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IXTP76N075T pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA76N075T
IXTP76N075T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
75 V
76 A
12 mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 50 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
75
75
± 20
76
75
210
10
500
V
V
V
A
A
A
A
mJ
3 V/ns
176
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 100 nA
1 μA
250 μA
9.7 12 mΩ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99632 (11/06)



IXYS Corporation
IXYS Corporation

IXTP76N075T Datasheet Preview

IXTP76N075T Datasheet

Power MOSFET

No Preview Available !

IXTP76N075T pdf
IXTA76N075T
IXTP76N075T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS= 10 V; ID = 0.5 ID25, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
td(off) RG = 10 Ω (External)
tf
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A
RthJC
RthCH
TO-220
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/μs
VR = 40 V, VGS = 0 V
Characteristic Values
Min. Typ. Max.
30 55
S
TO-263 (IXTA) Outline
2580
390
90
pF
pF
pF
20 ns
40 ns
38 ns
Pins: 1 - Gate 2 - Drain
33 ns
3 - Source 4, TAB - Drain
57
13.6
12.4
0.50
nC
nC
nC
0.85 °C/W
°C/W
Characteristic Values
Min. Typ. Max.
76 A
240 A
1.1 V
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
7.11
9.65
8.13
9.65
6.86
2.54
10.29
8.13
BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380
.270
.100
.405
.320
BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
.018 .029
TO-220 (IXTP) Outline
80 ns
Notes: 1. Pulse test, t 300 μs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405B2 6,759,692 7,063,975 B2
6,710,463
6771478 B2 7,071,537


Part Number IXTP76N075T
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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