Download the IXTP88N085T datasheet PDF.
This datasheet also covers the IXTA88N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 100 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 85 V
2.0 4.0 V
± 200 nA
2 µA 150 µA 9 11 m Ω
Advantages Easy to mo.
Full PDF Text Transcription for IXTP88N085T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP88N085T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA88N085T IXTP88N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 88 A 11 m Ω Symb...
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ent Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 88 A 11 m Ω Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 85 V 85 V ± 20 88 75 240 25 500 V A A A A mJ TO-263 (IXTA) G S TO-220 (IXTP) (TAB) 3 V/ns 230 W -55 ... +175 175 -
IXTP88N085T Datasheet
