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IXTP98N075T - Power MOSFET

Download the IXTP98N075T datasheet PDF. This datasheet also covers the IXTA98N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

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Note: The manufacturer provides a single datasheet file (IXTA98N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP98N075T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP98N075T. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information TrenchMVTM Power MOSFET IXTA98N075T IXTP98N075T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 75 V 98 A 10 mΩ Symbol VDSS VDGR VGSM I D...

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Mode VDSS = ID25 = RDS(on) ≤ 75 V 98 A 10 mΩ Symbol VDSS VDGR VGSM I D25 ILRMS IDM dv/dt IAR E AS Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient T C = 25°C Package Current Limit (RMS): TC = 25°C, pulse width limited by TJM I S ≤ I, DM di/dt ≤ 100 A/μs, V DD ≤ V DSS T J ≤ 175°C, R G = 5 Ω TC = 25°C T C = 25°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 75 V 75 V ± 20 V 98 A 75 A 280 A 5 V/ns 25 A 600 mJ 230 -55 ... +175 175 -40 ... +175 W °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP98N075T N-Channel MOSFET INCHANGE

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