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IXTQ130N10T - Power MOSFET

Download the IXTQ130N10T datasheet PDF. This datasheet also covers the IXTH130N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH130N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N10T IXTQ130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-3P) TO-247 TO-3P Maximum Ratings 100 100 V V ± 20 V 130 A 75 A 300 A 65 A 500 mJ 360 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 °C °C °C °C °C Nm/lb.in. 6.0 g 5.