• Part: IXTQ150N15P
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 293.87 KB
Download IXTQ150N15P Datasheet PDF
IXYS
IXTQ150N15P
Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99299E(03/06) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R th JC Rth CK Rth CS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 55 80 D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 5800 p F 1730 p F 400 p F VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 3.3 Ω (External) 30 ns 33 ns 100 ns 28 ns VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 190 n C 40 n C 105 n C TO-3P TO-264 0.21 0.15 0.21° C/W ° C/W ° C/W IXTK 150N15P IXTQ 150N15P TO-264 (IXTK) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ....