IXTQ152N085T Description
5.5 6 g g G = Gate S = Source Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. 85 2.0 4.0 ± 200 5 250 5.5 7.0 V V nA μA μA.
IXTQ152N085T Key Features
- easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density