IXTQ180N10T, IXTH180N10T - Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXTQ180N10T, IXTH180N10T
Manufacturer	IXYS Corporation
File Size	195.75 KB
Description	Power MOSFET
Datasheet	IXTH180N10T-IXYSCorporation.pdf
Note	This datasheet PDF includes multiple part numbers: IXTQ180N10T, IXTH180N10T. Please refer to the document for exact specifications by model.

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 V 2.

📁 IXTQ180N10T Similar Datasheet

Other Datasheets by IXYS Corporation

IXTQ180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
IXTQ180N085T - Power MOSFET
IXTQ182N055T - Power MOSFET
IXTQ100N25P - N-Channel MOSFET
IXTQ110N055P - PolarHT Power MOSFET
IXTQ110N10P - N-Channel MOSFET

Published: Feb 13, 2015 |